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Autor: B. Jayant Baliga
ISBN-13: 9783319939872
Einband: Book
Seiten: 1086
Format: 235x155x mm
Sprache: Englisch

Fundamentals of Power Semiconductor Devices

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Erstverkaufstag: 01.08.2018
139,09 €*
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Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Autor: B. Jayant Baliga
Jayant Baliga is an internationally recognized expert on power semiconductor devices. He is a Member of the National Academy of Engineering and a Fellow of the IEEE. He spent 15 years at the General Electric Research and Development Center, Schenectady, NY, leading their power device effort and was bestowed the highest scientific rank of Coolidge Fellow. He joined NCSU in 1988 as a Full Professor and was promoted to the rank of 'Distinguished University Professor' in 1997. Among his many NCSU honors, he was the recepient of the 1998 O. Max Gardner Award given by the North Carolina University Board of Governors to the one person within the 16 constituent universities who has made 'the greatest contribution to the welfare of the human race'; and the 2011 Alexander Quarles Holladay Medal of Excellence, the highest honor at NCSU from the Board of Trustees.

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Autor: B. Jayant Baliga
ISBN-13:: 9783319939872
ISBN: 3319939874
Erscheinungsjahr: 01.08.2018
Verlag: Springer-Verlag GmbH
Seiten: 1086
Sprache: Englisch
Auflage 18002, 2nd ed. 2019. 2019
Sonstiges: Buch, 235x155x mm, 50 schwarz-weiße und 300 farbige Abbildungen, Bibliographie